Rutherford backscattering in ion-implanted and pulsed laser annealed Si and Ge
| dc.contributor.author | Kiger, Shanalyn. | en_US |
| dc.date.accessioned | 2015-12-31T21:55:38Z | |
| dc.date.available | 2015-12-31T21:55:38Z | |
| dc.date.issued | 1985 | en_US |
| dc.date.published | 1985 | en_US |
| dc.description | Call number: LD2668 .T4 1985 K53 | en_US |
| dc.description.degree | Master of Science | en_US |
| dc.description.level | Masters | en_US |
| dc.identifier.uri | http://hdl.handle.net/2097/27521 | |
| dc.subject.AAT | Masters theses | en_US |
| dc.subject.LCSH | Backscattering. | en_US |
| dc.subject.LCSH | Ion implantation. | en_US |
| dc.subject.LCSH | Semiconductors--Impurity distribution. | en_US |
| dc.subject.LCSH | Semiconductor lasers. | en_US |
| dc.subject.LCSH | Germanium--Spectra. | en_US |
| dc.subject.LCSH | Silicon--Spectra. | en_US |
| dc.title | Rutherford backscattering in ion-implanted and pulsed laser annealed Si and Ge | en_US |
| dc.type | Text | en_US |
Files
Original bundle
1 - 1 of 1
