Time-resolved reflectivity study of pulsed-laser-irradiated, Si₃N₄-capped GaAs
| dc.contributor.author | Bhat, Ajit. | en_US |
| dc.date.accessioned | 2015-12-31T14:36:56Z | |
| dc.date.available | 2015-12-31T14:36:56Z | |
| dc.date.issued | 1987 | en_US |
| dc.date.published | 1987 | en_US |
| dc.description | Call number: LD2668 .T4 PHYS 1987 B52 | en_US |
| dc.description.degree | Master of Science | en_US |
| dc.description.department | Physics | en_US |
| dc.description.level | Masters | en_US |
| dc.identifier.uri | http://hdl.handle.net/2097/22731 | |
| dc.subject.AAT | Masters theses | en_US |
| dc.title | Time-resolved reflectivity study of pulsed-laser-irradiated, Si₃N₄-capped GaAs | en_US |
| dc.type | Text | en_US |
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