Grinding of silicon wafers: a review from historical perspectives

dc.citation.doi10.1016/j.ijmachtools.2008.05.009
dc.citation.epage1307en_US
dc.citation.issue12-13en_US
dc.citation.jtitleInternational Journal of Machine Tools and Manufactureen_US
dc.citation.spage1297en_US
dc.citation.volume48en_US
dc.contributor.authorPei, Zhijian J.
dc.contributor.authorFisher, Graham R.
dc.contributor.authorLiu, J.
dc.contributor.authoreidzpeien_US
dc.date.accessioned2009-11-25T22:12:50Z
dc.date.available2009-11-25T22:12:50Z
dc.date.issued2008-10-01
dc.date.published2008en_US
dc.description.abstractThe majority of semiconductor devices are built on silicon wafers. Manufacturing of high quality silicon wafers involves several machining processes including grinding. This review paper discusses historical perspectives on grinding of silicon wafers, impacts of wafer size progression on applications of grinding in silicon wafer manufacturing, and interrelationships between grinding and two other silicon machining processes (slicing and polishing). It is intended to help readers to gain a more comprehensive view on grinding of silicon wafers, and to be instrumental for research and development in grinding of wafers made from other materials (such as gallium arsenide, germanium, lithium niobate, sapphire, and silicon carbide).en_US
dc.description.versionArticle: Accepted Manuscript
dc.identifier.urihttp://hdl.handle.net/2097/2191
dc.relation.urihttps://doi.org/10.1016/j.ijmachtools.2008.05.009en_US
dc.rightsThis Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).
dc.rights.urihttps://rightsstatements.org/page/InC/1.0/
dc.subjectAbrasiveen_US
dc.subjectGallium arsenideen_US
dc.subjectGermaniumen_US
dc.subjectGrindingen_US
dc.subjectLappingen_US
dc.subjectLithium niobateen_US
dc.subjectMachiningen_US
dc.subjectPolishingen_US
dc.subjectSapphireen_US
dc.subjectSemiconductor materialen_US
dc.subjectSiliconen_US
dc.subjectSilicon carbideen_US
dc.subjectSilicon waferen_US
dc.titleGrinding of silicon wafers: a review from historical perspectivesen_US
dc.typeTexten_US

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