The sublimation-recondensation growth of titanium nitride crystals with N/Ti ratio of
0.99 on tungsten substrates is reported. The growth rate dependence on temperature and pressure
was determined, and the calculated activation energy was 775.8±29.8kJ/mol. The lateral and
vertical growth rates changed with the time of growth and the fraction of the tungsten substrate
surface covered. The orientation relationship of TiN (001) || W (001) with TiN [100] || W [110],
a 45o angle between TiN [100] and W [100], occurs not only for TiN crystals deposited on (001)
textured tungsten but also for TiN crystals deposited on randomly orientated tungsten. This study
demonstrates that this preferred orientational relationship minimizes the lattice mismatch
between the TiN and tungsten.