The defect structure in B[subscript]12As[subscript]2 epitaxial layers grown at two different temperatures on (0001)
6H-SiC by chemical vapor deposition (CVD) was studied using synchrotron white beam x-ray
topography (SWBXT) and high resolution transmission electron microscopy (HRTEM). The
observed differences in microstructures were correlated with the differences in nucleation at the
two growth temperatures. The effect of the difference in microstructure on macroscopic
properties of the B[subscript]12As[subscript]2 was illustrated using the example of thermal conductivity which was
measured using the 3-ω technique. The relationship between the measured thermal conductivity
and observed microstructures is discussed.