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| dc.contributor.author | Obreshkov, Boyan | |
| dc.contributor.author | Thumm, Uwe P. E. | |
| dc.date.accessioned | 2013-05-30T19:04:10Z | |
| dc.date.available | 2013-05-30T19:04:10Z | |
| dc.date.issued | 2011-06-14 | |
| dc.identifier.uri | http://hdl.handle.net/2097/15868 | |
| dc.description.abstract | We calculated the yield of outgoing hydrogen negative ions after the reflection of 1-keV neutral hydrogen atoms from a (2×1)-reconstructed Si(100) surface. We find that the charge-transfer dynamics at the reconstructed surface is dependent on both the surface-electronic structure and orientation of the projectile trajectory relative to the crystal azimuthal directions. Our results are in good quantitative agreement with the measured Hˉ fractions of Maazouz and Esaulov [Surf. Sci. 398 49 (1998)] for scattering trajectories that are aligned perpendicularly to rows of silicon dimers. | en_US |
| dc.language.iso | en_US | en_US |
| dc.relation.uri | https://doi.org/10.1103/PhysRevA.83.062902 | en_US |
| dc.rights | This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s). | en_US |
| dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | |
| dc.subject | Hydrogen-anion formation | en_US |
| dc.title | Hydrogen-anion formation near a (2×1)-reconstructed Si(100) surface: substrate-electronic-structure and trajectory dependence | en_US |
| dc.type | Article (publisher version) | en_US |
| dc.date.published | 2011 | en_US |
| dc.citation.doi | 10.1103/PhysRevA.83.062902 | en_US |
| dc.citation.epage | 062902-12 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.jtitle | Physical Review A | en_US |
| dc.citation.spage | 062902-1 | en_US |
| dc.citation.volume | 83 | en_US |
| dc.contributor.authoreid | thumm | en_US |
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