Sublimation Growth of Titanium Nitride Crystals

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dc.contributor.author Du, Li
dc.contributor.author Edgar, James H.
dc.contributor.author Kenik, Edward A.
dc.contributor.author Meyer III, Harry
dc.date.accessioned 2010-03-24T21:43:00Z
dc.date.available 2010-03-24T21:43:00Z
dc.date.issued 2010-03-24T21:43:00Z
dc.identifier.uri http://hdl.handle.net/2097/3279
dc.description.abstract The sublimation-recondensation growth of titanium nitride crystals with N/Ti ratio of 0.99 on tungsten substrates is reported. The growth rate dependence on temperature and pressure was determined, and the calculated activation energy was 775.8±29.8kJ/mol. The lateral and vertical growth rates changed with the time of growth and the fraction of the tungsten substrate surface covered. The orientation relationship of TiN (001) || W (001) with TiN [100] || W [110], a 45o angle between TiN [100] and W [100], occurs not only for TiN crystals deposited on (001) textured tungsten but also for TiN crystals deposited on randomly orientated tungsten. This study demonstrates that this preferred orientational relationship minimizes the lattice mismatch between the TiN and tungsten. en_US
dc.rights The original publication is available at www.springerlink.com. en_US
dc.subject TiN en_US
dc.subject Sublimation growth en_US
dc.subject Tungsten substrate en_US
dc.subject Activation energy en_US
dc.subject Orientation en_US
dc.title Sublimation Growth of Titanium Nitride Crystals en_US
dc.type Article (author version) en_US
dc.date.published 2010 en_US
dc.citation.doi 10.1007/s10854-009-9873-8 en_US
dc.citation.epage 87 en_US
dc.citation.issue 1 en_US
dc.citation.jtitle Journal of Materials Science: Materials in Electronics en_US
dc.citation.spage 78 en_US
dc.citation.volume 21 en_US
dc.contributor.authoreid edgarjh en_US


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