Survey of applications of WBG devices in power electronics

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dc.contributor.author Devarapally, Rahul Reddy
dc.date.accessioned 2016-04-22T22:00:53Z
dc.date.available 2016-04-22T22:00:53Z
dc.date.issued 2016-05-01 en_US
dc.identifier.uri http://hdl.handle.net/2097/32665
dc.description.abstract Wide bandgap devices have gained increasing attention in the market of power electronics for their ability to perform even in harsh environments. The high voltage blocking and high temperature withstanding capabilities make them outperform existing Silicon devices. They are expected to find places in future traction systems, electric vehicles, LED lightning and renewable energy engineering systems. In spite of several other advantages later mentioned in this paper, WBG devices also face a few challenges which need to be addressed before they can be applied in large scale in industries. Electromagnetic interference and new requirements in packaging methods are some of the challenges being faced by WBG devices. After the commercialization of these devices, many experiments are being carried out to understand and validate their abilities and drawbacks. This paper summarizes the experimental results of various applications of mainly Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices and also includes a section explaining the current challenges for their employment and improvements being made to overcome them. en_US
dc.language.iso en en_US
dc.publisher Kansas State University en
dc.subject Wide bandgap devices en_US
dc.subject Silicon Carbide en_US
dc.subject Gallium Nitride en_US
dc.subject Inverters en_US
dc.subject Application en_US
dc.title Survey of applications of WBG devices in power electronics en_US
dc.type Report en_US
dc.description.degree Master of Science en_US
dc.description.level Masters en_US
dc.description.department Department of Electrical and Computer Engineering en_US
dc.description.advisor Behrooz Mirafzal en_US
dc.date.published 2016 en_US
dc.date.graduationmonth May en_US


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