Survey of applications of WBG devices in power electronics

dc.contributor.authorDevarapally, Rahul Reddy
dc.date.accessioned2016-04-22T22:00:53Z
dc.date.available2016-04-22T22:00:53Z
dc.date.graduationmonthMayen_US
dc.date.issued2016-05-01en_US
dc.date.published2016en_US
dc.description.abstractWide bandgap devices have gained increasing attention in the market of power electronics for their ability to perform even in harsh environments. The high voltage blocking and high temperature withstanding capabilities make them outperform existing Silicon devices. They are expected to find places in future traction systems, electric vehicles, LED lightning and renewable energy engineering systems. In spite of several other advantages later mentioned in this paper, WBG devices also face a few challenges which need to be addressed before they can be applied in large scale in industries. Electromagnetic interference and new requirements in packaging methods are some of the challenges being faced by WBG devices. After the commercialization of these devices, many experiments are being carried out to understand and validate their abilities and drawbacks. This paper summarizes the experimental results of various applications of mainly Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices and also includes a section explaining the current challenges for their employment and improvements being made to overcome them.en_US
dc.description.advisorBehrooz Mirafzalen_US
dc.description.degreeMaster of Scienceen_US
dc.description.departmentDepartment of Electrical and Computer Engineeringen_US
dc.description.levelMastersen_US
dc.identifier.urihttp://hdl.handle.net/2097/32665
dc.language.isoenen_US
dc.publisherKansas State Universityen
dc.subjectWide bandgap devicesen_US
dc.subjectSilicon Carbideen_US
dc.subjectGallium Nitrideen_US
dc.subjectInvertersen_US
dc.subjectApplicationen_US
dc.titleSurvey of applications of WBG devices in power electronicsen_US
dc.typeReporten_US

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