Raman scattering studies on single-crystalline bulk AlN under high pressures

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dc.contributor.author Kuball, M.
dc.contributor.author Hayes, J. M.
dc.contributor.author Prins, A. D.
dc.contributor.author Van Uden, N. W.
dc.contributor.author Dunstan, D. J.
dc.contributor.author Shi, Ying
dc.contributor.author Edgar, James H.
dc.date.accessioned 2010-03-11T22:54:49Z
dc.date.available 2010-03-11T22:54:49Z
dc.date.issued 2001-02-02
dc.identifier.uri http://hdl.handle.net/2097/3162
dc.description.abstract We report on the Raman analysis of wurtzite single-crystalline bulk AlN under hydrostatic pressures up to 10 GPa. The pressure dependence of the AlN phonon frequencies was investigated. Mode Gru¨neisen parameters of 1.39, 1.57, 1.71, 0.93, and 1.26 were determined for the A₁ (TO), E₁ (TO), E₂ (high), A₁ (LO), and the quasi-longitudinal optical phonons, respectively. Recent theoretical calculations underestimate the pressure-induced frequency shift of the AlN phonons by about 20%–30%. Mode Gruneisen parameters of AlN were compared to those of GaN. en_US
dc.relation.uri http://doi.org/10.1063/1.1344567 en_US
dc.rights This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s). en_US
dc.subject Aluminum nitride en_US
dc.subject GaN en_US
dc.subject Spectroscopy en_US
dc.subject Strain en_US
dc.subject Layers en_US
dc.subject Volume en_US
dc.title Raman scattering studies on single-crystalline bulk AlN under high pressures en_US
dc.type Text en_US
dc.date.published 2001 en_US
dc.citation.doi 10.1063/1.1344567 en_US
dc.citation.epage 726 en_US
dc.citation.issue 6 en_US
dc.citation.jtitle Applied Physics Letters en_US
dc.citation.spage 724 en_US
dc.citation.volume 78 en_US
dc.contributor.authoreid edgarjh en_US
dc.description.version Article (publisher version)

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