Raman scattering studies on single-crystalline bulk AlN under high pressures

dc.citation.doi10.1063/1.1344567en_US
dc.citation.epage726en_US
dc.citation.issue6en_US
dc.citation.jtitleApplied Physics Lettersen_US
dc.citation.spage724en_US
dc.citation.volume78en_US
dc.contributor.authorKuball, M.
dc.contributor.authorHayes, J. M.
dc.contributor.authorPrins, A. D.
dc.contributor.authorVan Uden, N. W.
dc.contributor.authorDunstan, D. J.
dc.contributor.authorShi, Ying
dc.contributor.authorEdgar, James H.
dc.contributor.authoreidedgarjhen_US
dc.date.accessioned2010-03-11T22:54:49Z
dc.date.available2010-03-11T22:54:49Z
dc.date.issued2001-02-02
dc.date.published2001en_US
dc.description.abstractWe report on the Raman analysis of wurtzite single-crystalline bulk AlN under hydrostatic pressures up to 10 GPa. The pressure dependence of the AlN phonon frequencies was investigated. Mode Gru¨neisen parameters of 1.39, 1.57, 1.71, 0.93, and 1.26 were determined for the A₁ (TO), E₁ (TO), E₂ (high), A₁ (LO), and the quasi-longitudinal optical phonons, respectively. Recent theoretical calculations underestimate the pressure-induced frequency shift of the AlN phonons by about 20%–30%. Mode Gruneisen parameters of AlN were compared to those of GaN.en_US
dc.description.versionArticle (publisher version)
dc.identifier.urihttp://hdl.handle.net/2097/3162
dc.relation.urihttp://doi.org/10.1063/1.1344567en_US
dc.rightsThis Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).en_US
dc.subjectAluminum nitrideen_US
dc.subjectGaNen_US
dc.subjectSpectroscopyen_US
dc.subjectStrainen_US
dc.subjectLayersen_US
dc.subjectVolumeen_US
dc.titleRaman scattering studies on single-crystalline bulk AlN under high pressuresen_US
dc.typeTexten_US

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