Hydrogen-anion formation near a (2×1)-reconstructed Si(100) surface: substrate-electronic-structure and trajectory dependence

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dc.contributor.author Obreshkov, Boyan
dc.contributor.author Thumm, Uwe P. E.
dc.date.accessioned 2013-05-30T19:04:10Z
dc.date.available 2013-05-30T19:04:10Z
dc.date.issued 2013-05-30
dc.identifier.uri http://hdl.handle.net/2097/15868
dc.description.abstract We calculated the yield of outgoing hydrogen negative ions after the reflection of 1-keV neutral hydrogen atoms from a (2×1)-reconstructed Si(100) surface. We find that the charge-transfer dynamics at the reconstructed surface is dependent on both the surface-electronic structure and orientation of the projectile trajectory relative to the crystal azimuthal directions. Our results are in good quantitative agreement with the measured Hˉ fractions of Maazouz and Esaulov [Surf. Sci. 398 49 (1998)] for scattering trajectories that are aligned perpendicularly to rows of silicon dimers. en_US
dc.language.iso en_US en_US
dc.relation.uri http://pra.aps.org/abstract/PRA/v83/i6/e062902 en_US
dc.rights ©2011 American Physical Society en_US
dc.subject Hydrogen-anion formation en_US
dc.title Hydrogen-anion formation near a (2×1)-reconstructed Si(100) surface: substrate-electronic-structure and trajectory dependence en_US
dc.type Article (publisher version) en_US
dc.date.published 2011 en_US
dc.citation.doi doi:10.1103/PhysRevA.83.062902 en_US
dc.citation.epage 062902-12 en_US
dc.citation.issue 6 en_US
dc.citation.jtitle Physical Review A en_US
dc.citation.spage 062902-1 en_US
dc.citation.volume 83 en_US
dc.contributor.authoreid thumm en_US


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