The coefficients of thermal expansion of boron arsenide (B12As2) between 25°C and 850°C

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Show simple item record Whiteley, C. E. Kirkham, M. J. Edgar, James H. 2013-04-10T15:51:47Z 2013-04-10T15:51:47Z 2013-04-10
dc.description.abstract The present investigation was undertaken to determine the coefficients of thermal expansion for the boron-rich compound semiconductor icosahedral boron arsenide (B[subscript 12]As[subscript 2]). B[subscript 12]As[subscript 2] powder was synthesized in a sealed quartz ampoule containing boron and arsenic heated to 1100 °C and 600 °C respectively for 72 hours. The lattice constants of the B[subscript 12]As[subscript 2] were measured by high temperature X-ray diffraction (HTXRD) between 25 °C and 850 °C. The average lattice coefficients of thermal expansion were calculated perpendicular and parallel to the <111> axis in the rhombohedral setting (equivalent to the a and c axes in the hexagonal setting) as 4.9×10[superscript −6] Kˉ¹ and 5.3×10[superscript −6] Kˉ¹, respectively. The average unit cell volumetric coefficient of thermal expansion was 15.0×10[superscript −6] Kˉ¹. Knowing these values can be useful in explaining the cracking that occurs in heteroepitaxial B[subscript 12]As[subscript 2] thin films and crystals precipitated from metal solutions upon cooling from their synthesis temperatures. en_US
dc.language.iso en_US en_US
dc.relation.uri en_US
dc.subject Electronic materials en_US
dc.subject Semiconductors en_US
dc.subject Chemical synthesis en_US
dc.subject X-ray diffraction en_US
dc.subject Thermal expansion en_US
dc.subject B[subscript 12]As[subscript 2] en_US
dc.title The coefficients of thermal expansion of boron arsenide (B12As2) between 25°C and 850°C en_US
dc.type Article (author version) en_US 2013 en_US
dc.citation.doi doi:10.1016/j.jpcs.2012.12.026 en_US
dc.citation.epage 676 en_US
dc.citation.issue 5 en_US
dc.citation.jtitle Journal of Physics and Chemistry of Solids en_US
dc.citation.spage 673 en_US
dc.citation.volume 74 en_US
dc.contributor.authoreid edgarjh en_US

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