The coefficients of thermal expansion of boron arsenide (B12As2) between 25°C and 850°C
dc.citation.doi | doi:10.1016/j.jpcs.2012.12.026 | en_US |
dc.citation.epage | 676 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.jtitle | Journal of Physics and Chemistry of Solids | en_US |
dc.citation.spage | 673 | en_US |
dc.citation.volume | 74 | en_US |
dc.contributor.author | Whiteley, C. E. | |
dc.contributor.author | Kirkham, M. J. | |
dc.contributor.author | Edgar, James H. | |
dc.contributor.authoreid | edgarjh | en_US |
dc.date.accessioned | 2013-04-10T15:51:47Z | |
dc.date.available | 2013-04-10T15:51:47Z | |
dc.date.issued | 2013-04-10 | |
dc.date.published | 2013 | en_US |
dc.description.abstract | The present investigation was undertaken to determine the coefficients of thermal expansion for the boron-rich compound semiconductor icosahedral boron arsenide (B[subscript 12]As[subscript 2]). B[subscript 12]As[subscript 2] powder was synthesized in a sealed quartz ampoule containing boron and arsenic heated to 1100 °C and 600 °C respectively for 72 hours. The lattice constants of the B[subscript 12]As[subscript 2] were measured by high temperature X-ray diffraction (HTXRD) between 25 °C and 850 °C. The average lattice coefficients of thermal expansion were calculated perpendicular and parallel to the <111> axis in the rhombohedral setting (equivalent to the a and c axes in the hexagonal setting) as 4.9×10[superscript −6] Kˉ¹ and 5.3×10[superscript −6] Kˉ¹, respectively. The average unit cell volumetric coefficient of thermal expansion was 15.0×10[superscript −6] Kˉ¹. Knowing these values can be useful in explaining the cracking that occurs in heteroepitaxial B[subscript 12]As[subscript 2] thin films and crystals precipitated from metal solutions upon cooling from their synthesis temperatures. | en_US |
dc.identifier.uri | http://hdl.handle.net/2097/15487 | |
dc.language.iso | en_US | en_US |
dc.relation.uri | http://www.sciencedirect.com/science/article/pii/S0022369713000115 | en_US |
dc.subject | Electronic materials | en_US |
dc.subject | Semiconductors | en_US |
dc.subject | Chemical synthesis | en_US |
dc.subject | X-ray diffraction | en_US |
dc.subject | Thermal expansion | en_US |
dc.subject | B[subscript 12]As[subscript 2] | en_US |
dc.title | The coefficients of thermal expansion of boron arsenide (B12As2) between 25°C and 850°C | en_US |
dc.type | Article (author version) | en_US |