The coefficients of thermal expansion of boron arsenide (B12As2) between 25°C and 850°C

dc.citation.doidoi:10.1016/j.jpcs.2012.12.026en_US
dc.citation.epage676en_US
dc.citation.issue5en_US
dc.citation.jtitleJournal of Physics and Chemistry of Solidsen_US
dc.citation.spage673en_US
dc.citation.volume74en_US
dc.contributor.authorWhiteley, C. E.
dc.contributor.authorKirkham, M. J.
dc.contributor.authorEdgar, James H.
dc.contributor.authoreidedgarjhen_US
dc.date.accessioned2013-04-10T15:51:47Z
dc.date.available2013-04-10T15:51:47Z
dc.date.issued2013-04-10
dc.date.published2013en_US
dc.description.abstractThe present investigation was undertaken to determine the coefficients of thermal expansion for the boron-rich compound semiconductor icosahedral boron arsenide (B[subscript 12]As[subscript 2]). B[subscript 12]As[subscript 2] powder was synthesized in a sealed quartz ampoule containing boron and arsenic heated to 1100 °C and 600 °C respectively for 72 hours. The lattice constants of the B[subscript 12]As[subscript 2] were measured by high temperature X-ray diffraction (HTXRD) between 25 °C and 850 °C. The average lattice coefficients of thermal expansion were calculated perpendicular and parallel to the <111> axis in the rhombohedral setting (equivalent to the a and c axes in the hexagonal setting) as 4.9×10[superscript −6] Kˉ¹ and 5.3×10[superscript −6] Kˉ¹, respectively. The average unit cell volumetric coefficient of thermal expansion was 15.0×10[superscript −6] Kˉ¹. Knowing these values can be useful in explaining the cracking that occurs in heteroepitaxial B[subscript 12]As[subscript 2] thin films and crystals precipitated from metal solutions upon cooling from their synthesis temperatures.en_US
dc.identifier.urihttp://hdl.handle.net/2097/15487
dc.language.isoen_USen_US
dc.relation.urihttp://www.sciencedirect.com/science/article/pii/S0022369713000115en_US
dc.subjectElectronic materialsen_US
dc.subjectSemiconductorsen_US
dc.subjectChemical synthesisen_US
dc.subjectX-ray diffractionen_US
dc.subjectThermal expansionen_US
dc.subjectB[subscript 12]As[subscript 2]en_US
dc.titleThe coefficients of thermal expansion of boron arsenide (B12As2) between 25°C and 850°Cen_US
dc.typeArticle (author version)en_US

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