Grojo, D.Mouskeftaras, A.Delaporte, P.Lei, Shuting T.2016-04-062016-04-062015-04-20http://hdl.handle.net/2097/32336Citation: Grojo, D., Mouskeftaras, A., Delaporte, P., & Lei, S. T. (2015). Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared. Journal of Applied Physics, 117(15), 7. doi:10.1063/1.4918669We produce and characterize high-angle femtosecond Bessel beams at 1300-nm wavelength leading to nonlinearly ionized plasma micro-channels in both glass and silicon. With microjoule pulse energy, we demonstrate controlled through-modifications in 150-mu m glass substrates. In silicon, strong two-photon absorption leads to larger damages at the front surface but also a clamping of the intensity inside the bulk at a level of approximate to 4 x 10(11) W cm(-2) which is below the threshold for volume and rear surface modification. We show that the intensity clamping is associated with a strong degradation of the Bessel-like profile. The observations highlight that the inherent limitation to ultrafast energy deposition inside semiconductors with Gaussian focusing [Mouskeftaras et al., Appl. Phys. Lett. 105, 191103 (2014)] applies also for high-angle Bessel beams. (C) 2015 AIP Publishing LLC.This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).Transparent MaterialsFused-SilicaPulsesAbsorptionNmGlassText