Gong, Y.Tapajna, M.Bakalova, S.Zhang, Y.Edgar, James H.Zhang, Y.Dudley, M.Hopkins, M.Kuball, M.2010-07-292010-07-292010-06-04http://hdl.handle.net/2097/4323B12As2/SiC pn heterojunction diodes based on the radiation-hard B12As2 deposited on (0001) n-type 4H–SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4×10−6 A/cm2. Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of ∼1.8–2.0×1017 cm−3 in B12As2 with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B12As2 and SiC were estimated to be ∼1.06 eV and 1.12 eV for conduction band and valance band, respectively. The authors gratefully acknowledge the support by the Engineering and Physical Science Research Council (EPSRC) under Grant No. EP/D075033/1, by the National Science Foundation Materials World Network Program under Grant No. 0602875 under the NSF-EPSRC Joint Materials Program, and by the U.S. Department of Energy under Contract No. DE-AC02-98CH10886.This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).Rich SolidsCapacitanceIrradiationGrowthText