Wang, S. H.Lysczek, E. M.Liu, BangzhiMohney, S. E.Xu, Z.Nagarajan, R.Edgar, James H.2010-03-112010-03-112005-07-20http://hdl.handle.net/2097/3161Palladium, Pt, and Cr/Pt contacts to the wide band gap icosahedral boride semiconductor B₁₂As₂ have been studied. All Pd and Pt contacts exhibited nonlinear I-V characteristics, while Cr/Pt contacts were Ohmic. The specific contact resistance was reduced from 6Ω cm² as-deposited to 3x10[superscript]-⁴ Ω cm² after the Cr/Pt contacts were annealed at 750 °C for 30 s in Ar. Annealing at 600 °C or higher drastically reduced the semiconductor sheet resistance, whether annealing was performed before or after metallization. This apparent activation of the semiconductor is a likely cause for the improvement in the Ohmic contacts with annealing.This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).https://rightsstatements.org/page/InC/1.0/Chemical vapor depositionThin filmsGrowthText