Wei, DamingHossain, T.Garces, N. Y.Nepal, N.Meyer, H. M., IIIKirkham, M. J.Eddy, C. R. Jr.Edgar, James H.2013-08-282013-08-282013-03-08http://hdl.handle.net/2097/16376This paper reports on the influence of deposition temperature on the structure, composition, and electrical properties of TiO[subscript 2] thin films deposited on n-type silicon (100) by plasma-assisted atomic layer deposition (PA-ALD). TiO[subscript 2] layers ~20 nm thick, deposited at temperatures ranging from 100 to 300°C, were investigated. Samples deposited at 200°C and 250°C had the most uniform coverage as determined by atomic force microscopy. The average carbon concentration throughout the oxide layer and at the TiO[subscript 2]/Si interface was lowest at 200°C. Metal oxide semiconductor capacitors (MOSCAPs) were fabricated, and profiled by capacitance-voltage techniques. The sample prepared at 200°C had negligible hysteresis (from a capacitance-voltage plot) and the lowest interface trap density (as extracted using the conductance method). Current-voltage measurements were carried out with top-to-bottom structures. At −2 V gate bias voltage, the smallest leakage current was 1.22 × 10[superscript −5] A/cm² for the 100°C deposited sample.en-USThis Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).Deposition temperatureAtomic layer depositionTiO2Text