Hoffman, Timothy B.Clubine, B.Zhang, Y.Snow, K.Edgar, James H.2014-06-202014-06-202014-06-20http://hdl.handle.net/2097/17869Hexagonal boron nitride (hBN) single crystals were grown using a Ni–Cr flux growth method. The crystallization cooling rate, soak temperature and soak time were controlled to determine their effect on crystal size and quality. A cooling rate of 2 °C/hr produced the best quality hBN crystals. The maximum crystal width increased with soak temperature from 1 mm at 1450 °C to 5 mm at 1700 °C. The crystal thickness decreased with soak temperature from 500 µm at 1500 °C to 40 µm at 1700 °C. A soak time of 24 to 48 h produced the maximum crystal thickness. X-ray diffraction and Raman spectroscopy confirmed that the crystals were highly ordered and of high purity.en-USNitridesSemiconducting III-V materialsSingle crystal growthGrowth from solutionsCrystal morphologyArticle (author version)