Frye, C. D.Kucheyev, S. O.Edgar, James H.Voss, L. F.Conway, A. M.Shao, Q. H.Nikolic, R. J.2016-04-042016-04-042015-04-01http://hdl.handle.net/2097/32256Citation: Frye, C. D., Kucheyev, S. O., Edgar, J. H., Voss, L. F., Conway, A. M., Shao, Q. H., & Nikolic, R. J. (2015). Sintered Cr/Pt and Ni/Au ohmic contacts to B12P2. Journal of Vacuum Science & Technology A, 33(3), 6. doi:10.1116/1.4917010Icosahedral boron phosphide (B12P2) is a wide-bandgap semiconductor possessing interesting properties such as high hardness, chemical inertness, and the reported ability to self-heal from irradiation by high energy electrons. Here, the authors developed Cr/Pt and Ni/Au ohmic contacts to epitaxially grown B12P2 for materials characterization and electronic device development. Cr/Pt contacts became ohmic after annealing at 700 degrees C for 30 s with a specific contact resistance of 2 x 10(-4) Omega cm(2), as measured by the linear transfer length method. Ni/Au contacts were ohmic prior to any annealing, and their minimum specific contact resistance was similar to l-4 x 10(-4) Omega cm(2) after annealing over the temperature range of 500-800 degrees C. Rutherford backscattering spectrometry revealed a strong reaction and intermixing between Cr/Pt and B12P2 at 700 degrees C and a reaction layer between Ni and B12P2 thinner than similar to 25 nm at 500 degrees C. (C) 2015 American Vacuum Society.This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).P-Type GanBoron-Rich SolidsElectrical-PropertiesPhase-DiagramGrowthPhosphideArticle