Sedhain, A.Nepal, N.Nakarmi, M. L.Al tahtamouni, T. M.Lin, J. Y.Jiang, H. X.Gu, Z.Edgar, James H.2009-11-132009-11-132008-06-01http://hdl.handle.net/2097/2162AlN homoepilayers and heteroepilayers were grown on polar c-plane and nonpolar a-plane and m-plane orientations of AlN bulk and sapphire substrates by metal organic chemical vapor deposition. A systematic comparative study of photoluminescence properties of these samples revealed that all AlN homoepilayers c, a and m planes were strain free with an identical band gap of about 6.099 (6.035) eV at 10 (300) K, which is about 42 meV below the band gap of c-plane AlN heteroepilayers grown on sapphire. Also, nonpolar a-plane homoepilayers have the highest emission intensity over all other types of epilayers. We believe that a-plane AlN homoepilayers have the potential to provide orders of magnitude improvement in the performance of new generation deep UV photonic devices.This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).Nitride filmsSapphireQuantum wellsText