Yao, Huade.2015-12-302015-12-301986http://hdl.handle.net/2097/22183Call number: LD2668 .T4 1986 Y36Raman spectroscopy.Annealing of crystals.Gallium arsenide semiconductors.Dye lasers.Ion implantation.Raman measurements of dye-laser-annealed, ion implanted GaAsTextMasters theses