Optimization of Ni–Cr flux growth for hexagonal boron nitride single crystals

dc.citation.doidoi:10.1016/j.jcrysgro.2013.09.030en_US
dc.citation.epage118en_US
dc.citation.jtitleJournal of Crystal Growthen_US
dc.citation.spage114en_US
dc.citation.volume393en_US
dc.contributor.authorHoffman, Timothy B.
dc.contributor.authorClubine, B.
dc.contributor.authorZhang, Y.
dc.contributor.authorSnow, K.
dc.contributor.authorEdgar, James H.
dc.contributor.authoreidthoffmanen_US
dc.contributor.authoreidedgarjhen_US
dc.date.accessioned2014-06-20T13:38:27Z
dc.date.available2014-06-20T13:38:27Z
dc.date.issued2014-06-20
dc.date.published2014en_US
dc.description.abstractHexagonal boron nitride (hBN) single crystals were grown using a Ni–Cr flux growth method. The crystallization cooling rate, soak temperature and soak time were controlled to determine their effect on crystal size and quality. A cooling rate of 2 °C/hr produced the best quality hBN crystals. The maximum crystal width increased with soak temperature from 1 mm at 1450 °C to 5 mm at 1700 °C. The crystal thickness decreased with soak temperature from 500 µm at 1500 °C to 40 µm at 1700 °C. A soak time of 24 to 48 h produced the maximum crystal thickness. X-ray diffraction and Raman spectroscopy confirmed that the crystals were highly ordered and of high purity.en_US
dc.identifier.urihttp://hdl.handle.net/2097/17869
dc.language.isoen_USen_US
dc.relation.urihttp://www.sciencedirect.com/science/article/pii/S0022024813006313en_US
dc.subjectNitridesen_US
dc.subjectSemiconducting III-V materialsen_US
dc.subjectSingle crystal growthen_US
dc.subjectGrowth from solutionsen_US
dc.subjectCrystal morphologyen_US
dc.titleOptimization of Ni–Cr flux growth for hexagonal boron nitride single crystalsen_US
dc.typeArticle (author version)en_US

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