Optimization of Ni–Cr flux growth for hexagonal boron nitride single crystals
dc.citation.doi | doi:10.1016/j.jcrysgro.2013.09.030 | en_US |
dc.citation.epage | 118 | en_US |
dc.citation.jtitle | Journal of Crystal Growth | en_US |
dc.citation.spage | 114 | en_US |
dc.citation.volume | 393 | en_US |
dc.contributor.author | Hoffman, Timothy B. | |
dc.contributor.author | Clubine, B. | |
dc.contributor.author | Zhang, Y. | |
dc.contributor.author | Snow, K. | |
dc.contributor.author | Edgar, James H. | |
dc.contributor.authoreid | thoffman | en_US |
dc.contributor.authoreid | edgarjh | en_US |
dc.date.accessioned | 2014-06-20T13:38:27Z | |
dc.date.available | 2014-06-20T13:38:27Z | |
dc.date.issued | 2014-06-20 | |
dc.date.published | 2014 | en_US |
dc.description.abstract | Hexagonal boron nitride (hBN) single crystals were grown using a Ni–Cr flux growth method. The crystallization cooling rate, soak temperature and soak time were controlled to determine their effect on crystal size and quality. A cooling rate of 2 °C/hr produced the best quality hBN crystals. The maximum crystal width increased with soak temperature from 1 mm at 1450 °C to 5 mm at 1700 °C. The crystal thickness decreased with soak temperature from 500 µm at 1500 °C to 40 µm at 1700 °C. A soak time of 24 to 48 h produced the maximum crystal thickness. X-ray diffraction and Raman spectroscopy confirmed that the crystals were highly ordered and of high purity. | en_US |
dc.identifier.uri | http://hdl.handle.net/2097/17869 | |
dc.language.iso | en_US | en_US |
dc.relation.uri | http://www.sciencedirect.com/science/article/pii/S0022024813006313 | en_US |
dc.subject | Nitrides | en_US |
dc.subject | Semiconducting III-V materials | en_US |
dc.subject | Single crystal growth | en_US |
dc.subject | Growth from solutions | en_US |
dc.subject | Crystal morphology | en_US |
dc.title | Optimization of Ni–Cr flux growth for hexagonal boron nitride single crystals | en_US |
dc.type | Article (author version) | en_US |