Simultaneous double side grinding of silicon wafers: a literature review

dc.citation.doi10.1016/j.ijmachtools.2005.09.011
dc.citation.epage1458en_US
dc.citation.issue12-13en_US
dc.citation.jtitleInternational Journal of Machine Tools and Manufactureen_US
dc.citation.spage1449en_US
dc.citation.volume46en_US
dc.contributor.authorLi, Z. C.
dc.contributor.authorPei, Zhijian J.
dc.contributor.authorFisher, Graham R.
dc.contributor.authoreidzpeien_US
dc.date.accessioned2009-11-25T22:13:35Z
dc.date.available2009-11-25T22:13:35Z
dc.date.issued2006-10-01
dc.date.published2006en_US
dc.description.abstractSilicon wafers are the most widely used substrates for fabricating integrated circuits (ICs). The quality of ICs depends directly on the quality of silicon wafers. A series of processes are required to manufacture high quality silicon wafers. Simultaneous double side grinding (SDSG) is one of the processes to flatten the wire-sawn wafers. This paper reviews the literature on SDSG of silicon wafers, covering the history, machine development (including machine configuration, drive and support systems, and control system), and process modeling (including grinding marks and wafer shape). It also discusses some possible topics for future research.en_US
dc.description.versionArticle: Accepted Manuscript
dc.identifier.urihttp://hdl.handle.net/2097/2194
dc.relation.urihttps://doi.org/10.1016/j.ijmachtools.2005.09.011en_US
dc.rightsThis Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).
dc.rights.urihttps://rightsstatements.org/page/InC/1.0/
dc.subjectGrindingen_US
dc.subjectMachiningen_US
dc.subjectModelingen_US
dc.subjectSemiconductor materialen_US
dc.subjectSilicon waferen_US
dc.subjectSimultaneous double side grindingen_US
dc.titleSimultaneous double side grinding of silicon wafers: a literature reviewen_US
dc.typeTexten_US

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