Growth of hexagonal boron nitride from molten nickel solutions: a reactive molecular dynamics study

dc.contributor.authorAhmadisharaf, Amin
dc.date.accessioned2025-10-21T14:02:38Z
dc.date.available2025-10-21T14:02:38Z
dc.date.graduationmonthDecember
dc.date.issued2025
dc.description.abstractMetal flux methods are excellent for synthesizing high-quality hexagonal boron nitride (hBN) crystals, but the atomic mechanisms of hBN nucleation and growth in these systems are poorly understood and difficult to probe experimentally. Here, we harness classical reactive molecular dynamics (ReaxFF) to unravel the mechanisms of hBN synthesis from liquid nickel solvent over time scales up to 30 ns. These simulations mimic experimental conditions by including relatively large liquid nickel slabs containing dissolved boron and a molecular nitrogen gas phase. Overall, the reaction takes place almost exclusively on the surface of the liquid nickel, owing to the low solubility of nitrogen in bulk nickel and the intermediate species’ preference for the metal–gas interface. The formation of hBN invariably begins by reaction of dinitrogen with nickel-solvated boron atoms at the surface, forming intermediate N–N–B species, which typically evolve into B–N–B units through a short-lived intermediate where a single nitrogen atom is coordinated by one nitrogen and two boron atoms. The resulting B–N–B units, in turn, coalesce with growing hBN nuclei and carry nitrogen between hBN nanocrystals in an Ostwald ripening process. The amount of hBN produced on the tens of nanosecond time scale depends critically on the boron concentration, while having a much weaker dependence on the N2 pressure for the regime considered (N2 pressures of 2.5–10 MPa, Ni-B solutions with 6–12% boron by atom fraction). The highest rate of hBN formation occurs at the lowest temperature considered (1750 K, just above the melting point of nickel), while no hBN sheets are formed at 2000 K or above. An analysis of the transition pathways for nitrogen atoms shows that the final step, incorporation of small B–N motifs into larger hBN sheets, is the rate-limiting step in the regimes considered. While raising the temperature from 1750 to 2000 K has little effect on the formation of intermediates (N–N–B, B–N–B, etc.), the lack of large hBN sheets at temperatures >1900 K is explained by decreased probability of the final step and increased probability of break-up of hBN into B–N motifs.
dc.description.advisorJeffrey R. Comer
dc.description.degreeMaster of Science
dc.description.departmentDepartment of Chemical Engineering
dc.description.levelMasters
dc.description.sponsorshipDepartment of Energy office of basic science
dc.identifier.urihttps://hdl.handle.net/2097/45404
dc.language.isoen_US
dc.subjectMolecular simulations
dc.subjectHexagonal boron nitride
dc.subjectSurface phonemenal reaction
dc.subjectAb inito simulations
dc.subjectMolecular analysis
dc.titleGrowth of hexagonal boron nitride from molten nickel solutions: a reactive molecular dynamics study
dc.typeReport

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