HVPE of Scandium Nitride on 6H-SiC(0001)

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dc.contributor.author Edgar, James H.
dc.contributor.author Bohnen, T.
dc.contributor.author Hageman, P. R.
dc.date.accessioned 2010-06-10T19:01:12Z
dc.date.available 2010-06-10T19:01:12Z
dc.date.issued 2008-03-15
dc.identifier.uri http://hdl.handle.net/2097/4224
dc.description.abstract The epitaxy of scandium nitride deposited by hydride vapor phase epitaxy on 6HSiC( 0001) substrates is reported. The structure and composition of the deposited films were dependent on both the scandium metal source and substrate temperatures. At substrate temperatures between 800 to 900 °C, the ScN exhibited a single (111) orientation. At substrate temperatures of 1000 °C and above, the films were mixtures of (100) and (111) orientations. Aluminum was detected by EDAX in the ScN films when the scandium source temperature was greater than 900 °C, presumably due to the reaction between scandium and the alumina reactor tube. Chlorine was detected in the films, and its concentration increased as the scandium source temperature was decreased from 1000 °C to 800 °C. en_US
dc.relation.uri http://doi.org/10.1016/j.jcrysgro.2007.12.053 en_US
dc.subject Impurities en_US
dc.subject X-ray diffraction en_US
dc.subject Hydride vapor phase epitaxy en_US
dc.subject Nitrides en_US
dc.subject Semiconducting III-V materials en_US
dc.title HVPE of Scandium Nitride on 6H-SiC(0001) en_US
dc.type Text en_US
dc.date.published 2008 en_US
dc.citation.doi 10.1016/j.jcrysgro.2007.12.053 en_US
dc.citation.epage 1080 en_US
dc.citation.issue 6 en_US
dc.citation.jtitle Journal of Crystal Growth en_US
dc.citation.spage 1075 en_US
dc.citation.volume 310 en_US
dc.contributor.authoreid edgarjh en_US
dc.description.version Article (author version)


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