Bulk (100) scandium nitride crystal growth by sublimation on tungsten single crystal seeds

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dc.contributor.author Al-Atabi, Hayder A.
dc.contributor.author Khan, Neelam
dc.contributor.author Nour, Edil
dc.contributor.author Mondoux, Joseph
dc.contributor.author Zhang, Yi
dc.contributor.author Edgar, James H.
dc.date.accessioned 2018-10-09T15:01:31Z
dc.date.available 2018-10-09T15:01:31Z
dc.date.issued 2018-09-20 en_US
dc.identifier.uri http://hdl.handle.net/2097/39208
dc.description Citation: Al-Atabi, H. A., Khan, N., Nour, E., Mondoux, J., Zhang, Y., & Edgar, J. H. (2018). Bulk (100) scandium nitride crystal growth by sublimation on tungsten single crystal seeds. Applied Physics Letters, 113(12), 122106. https://doi.org/10.1063/1.5051457 en_US
dc.description.abstract Scandium nitride single crystals (14–90 μm thick) were grown on a tungsten (100) single crystal substrate by physical vapor transport in the temperature range of 1850 °C–2000 °C and pressure of 15–35 Torr. Epitaxial growth was confirmed using in-plane ϕ scan and out-of-plane x-ray diffraction techniques which revealed that ScN exhibits cube-on-cube growth with a plane relationship ScN (001) ǁ W (001) and normal direction ScN [100] ǁ W [110]. Atomic force microscopy revealed that the surface roughness decreased from 83 nm to 18 nm as the growth temperature was increased. The x-ray diffraction rocking curve (XRC) widths decreased with temperature, indicating that the crystal quality improved as the growth temperature increased. The lowest XRC FWHM was 821 arcsec which is so far the lowest value reported for ScN. Scanning electron microscopy exhibited the formation of macrosteps and cracks on the crystal surface with the latter due to the mismatch of ScN and tungsten coefficients of thermal expansion. en_US
dc.language.iso en_US en_US
dc.relation.uri https://doi.org/10.1063/1.5051457
dc.rights This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in (citation of published article) and may be found at https://doi.org/10.1063/1.5051457 en_US
dc.rights.uri http://rightsstatements.org/vocab/InC/1.0/
dc.rights.uri https://publishing.aip.org/authors/web-posting-guidelines
dc.title Bulk (100) scandium nitride crystal growth by sublimation on tungsten single crystal seeds en_US
dc.type Article (author version) en_US
dc.date.published 2018 en_US
dc.citation.doi 10.1063/1.5051457 en_US
dc.citation.eissn 1077-3118 en_US
dc.citation.issn 0003-6951 en_US
dc.citation.issue 12 en_US
dc.citation.jtitle Applied Physics Letters en_US
dc.citation.volume 113 en_US
dc.contributor.authoreid edgarjh en_US


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This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in (citation of published article) and may be found at https://doi.org/10.1063/1.5051457 Except where otherwise noted, the use of this item is bound by the following: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in (citation of published article) and may be found at https://doi.org/10.1063/1.5051457

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