Hydride CVD Hetero-epitaxy of B12P2 on 4 H-SiC

K-REx Repository

Show simple item record

dc.contributor.author Frye, C.D.
dc.contributor.author Saw, C.K.
dc.contributor.author Padavala, Balabalaji
dc.contributor.author Nikolić, R.J.
dc.contributor.author Edgar, James H.
dc.date.accessioned 2016-11-29T19:37:57Z
dc.date.available 2016-11-29T19:37:57Z
dc.identifier.uri http://hdl.handle.net/2097/34575
dc.description.abstract Icosahedral boron phosphide (B12P2) is a wide bandgap semiconductor (3.35 eV) that has been reported to “self-heal” from high-energy electron bombardment, making it attractive for potential use in radioisotope batteries, radiation detection, or in electronics in high radiation environments. This study focused on improving B12P2 hetero-epitaxial films by growing on 4 H-SiC substrates over the temperature range of 1250–1450 °C using B2H6 and PH3 precursors in a H2 carrier gas. XRD scans and Laue transmission photographs revealed that the epitaxial relationship was View the MathML source. The film morphology and crystallinity were investigated as a function of growth temperature and growth time. At 1250 °C, films tended to form rough, polycrystalline layers, but at 1300 and 1350 °C, films were continuous and comparatively smooth (View the MathML source). At 1400 or 1450 °C, the films grew in islands that coalesced as the films became thicker. Using XRD rocking curves to evaluate the crystal quality, 1300 °C was the optimum growth temperature tested. At 1300 °C, the rocking curve FWHM decreased with increasing film thickness from 1494 arcsec for a 1.1 μm thick film to 954 arcsec for a 2.7 μm thick film, suggesting a reduction in defects with thickness. en_US
dc.language.iso en_US en_US
dc.relation.uri http://dx.doi.org/10.1016/j.jcrysgro.2016.11.101 en_US
dc.rights © 2016. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ en_US
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject A3. Chemical vapor deposition processes en_US
dc.subject A3. Hydride vapor phase epitaxy en_US
dc.subject B1. Borides en_US
dc.subject B2. Semiconducting boride compounds en_US
dc.title Hydride CVD Hetero-epitaxy of B12P2 on 4 H-SiC en_US
dc.type Article (author version) en_US
dc.date.published 2016 en_US
dc.citation.doi 10.1016/j.jcrysgro.2016.11.101 en_US
dc.citation.issn 0022-0248 en_US
dc.citation.jtitle Journal of Crystal Growth en_US
dc.contributor.authoreid edgarjh en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record

© 2016. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ Except where otherwise noted, the use of this item is bound by the following: © 2016. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/

Search K-REx


Advanced Search

Browse

My Account

Statistics








Center for the

Advancement of Digital

Scholarship

118 Hale Library

Manhattan KS 66506


(785) 532-7444

cads@k-state.edu