CVD growth and properties of boron phosphide on 3C-SiC

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dc.contributor.author Padavala, Balabalaji
dc.contributor.author Frye, C.D.
dc.contributor.author Wang, Xuejing
dc.contributor.author Raghothamachar, Balaji
dc.contributor.author Edgar, James H.
dc.date.accessioned 2016-10-13T21:55:52Z
dc.date.available 2016-10-13T21:55:52Z
dc.identifier.uri http://hdl.handle.net/2097/34150
dc.description Citation: CVD growth and properties of boron phosphide on 3C-SiC, B. Padavala, C.D.Frye, X. Wang, B. Raghothamachar, and J.H. Edgar, Journal of Crystal Growth, volume 449 pp. 15-21 (2016).
dc.description.abstract Improving the crystalline quality of boron phosphide (BP) is essential for realizing its full potential in semiconductor device applications. In this study, 3C-SiC was tested as a substrate for BP epitaxy. BP films were grown on 3C-SiC(100)/Si, 3C-SiC(111)/Si, and 3C-SiC(111)/4H-SiC(0001) substrates in a horizontal chemical vapor deposition (CVD) system. Films were produced with good crystalline orientation and morphological features in the temperature range of 1000–1200 °C using a PH3+B2H6+H2 mixture. Rotational twinning was absent in the BP due to the crystal symmetry-matching with 3C-SiC. Confocal 3D Raman imaging of BP films revealed primarily uniform peak shift and peak widths across the scanned area, except at defects on the surface. Synchrotron white beam X-ray topography showed the epitaxial relationship between BP and 3C-SiC was (100)(100)〈011〉〈011〉BP||(100)(100)〈011〉〈011〉3C-SiC and (111)(111)View the MathML source〈112̅〉BP||(111)(111)View the MathML source〈112̅〉3C-SiC. Scanning electron microscopy, Raman spectroscopy and X-ray diffraction analysis indicated residual tensile strain in the films and improved crystalline quality at temperatures below 1200 °C. These results indicated that BP properties could be further enhanced by employing high quality bulk 3C-SiC or 3C-SiC epilayers on 4H-SiC substrates. en_US
dc.language.iso en_US en_US
dc.relation.uri http://dx.doi.org/10.1016/j.jcrysgro.2016.05.031 en_US
dc.rights Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) en_US
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject B2. Semiconducting III–V materials en_US
dc.subject A3. Hydride vapor phase epitaxy en_US
dc.subject A1. Characterization en_US
dc.subject A1. High resolution X-ray diffraction en_US
dc.subject A1. X-ray topography en_US
dc.subject A1. Defects en_US
dc.title CVD growth and properties of boron phosphide on 3C-SiC en_US
dc.type Article (author version) en_US
dc.date.published 2016 en_US
dc.citation.doi 10.1016/j.jcrysgro.2016.05.031 en_US
dc.citation.epage 21 en_US
dc.citation.issn 0022-0248 en_US
dc.citation.jtitle Journal of Crystal Growth en_US
dc.citation.spage 15 en_US
dc.citation.volume 449 en_US
dc.description.embargo 2018-05-17
dc.contributor.authoreid edgarjh en_US


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