Nature of exciton transitions in hexagonal boron nitride

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Show simple item record Li, J. Cao, X. K. Hoffman, Timothy B. Edgar, James H. Lin, J. Y. Jiang, H. X. 2016-09-20T17:32:48Z 2016-09-20T17:32:48Z
dc.description Citation: Li, J., Cao, X. K., Hoffman, T. B., Edgar, J. H., Lin, J. Y., & Jiang, H. X. (2016). Nature of exciton transitions in hexagonal boron nitride. Applied Physics Letters, 108(12), 4. doi:10.1063/1.4944696
dc.description.abstract In contrast to other III-nitride semiconductors GaN and AlN, the intrinsic (or free) exciton transition in hexagonal boron nitride (h-BN) consists of rather complex fine spectral features (resolved into six sharp emission peaks) and the origin of which is still unclear. Here, the free exciton transition (FX) in h-BN bulk crystals synthesized by a solution method at atmospheric pressure has been probed by deep UV time-resolved photoluminescence (PL) spectroscopy. Based on the separations between the energy peak positions of the FX emission lines, the identical PL decay kinetics among different FX emission lines, and the known phonon modes in h-BN, we suggest that there is only one principal emission line corresponding to the direct intrinsic FX transition in h-BN, whereas all other fine features are a result of phonon-assisted transitions. The identified phonon modes are all associated with the center of the Brillouin zone. Our results offer a simple picture for the understanding of the fundamental exciton transitions in h-BN. (C) 2016 AIP Publishing LLC.
dc.rights This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters 108, 122101 (2016); and may be found at
dc.subject Fundamental Optical-Transitions
dc.subject Thermal-Neutron Detectors
dc.subject Pressure
dc.subject Emission
dc.subject Crystals
dc.subject Gan
dc.title Nature of exciton transitions in hexagonal boron nitride
dc.type Article 2016
dc.citation.doi 10.1063/1.4944696
dc.citation.issn 0003-6951
dc.citation.issue 12
dc.citation.jtitle Applied Physics Letters
dc.citation.spage 4
dc.citation.volume 108
dc.description.embargo 2017-04
dc.contributor.authoreid edgarjh

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