The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates

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dc.contributor.author Sedhain, A.
dc.contributor.author Du, L.
dc.contributor.author Edgar, James H.
dc.contributor.author Lin, J. Y.
dc.contributor.author Jiang, H. X.
dc.date.accessioned 2010-03-11T22:55:33Z
dc.date.available 2010-03-11T22:55:33Z
dc.date.issued 2009-12-29
dc.identifier.uri http://hdl.handle.net/2097/3163
dc.description.abstract The yellow color of bulk AlN crystals was found to be caused by the optical absorption of light with wavelengths shorter than that of yellow. This yellow impurity limits UV transparency and hence restricts the applications of AlN substrates for deep UV optoelectronic devices. Here, the optical properties of AlN epilayers, polycrystalline AlN, and bulk AlN single crystals have been investigated using photoluminescence PL spectroscopy to address the origin of this yellow appearance. An emission band with a linewidth of ~0.3 eV (at 10 K) was observed at ~2.78 eV. We propose that the origin of the yellow color in bulk AlN is due to a band-to-impurity absorption involving the excitation of electrons from the valence band to the doubly negative charged state, (V[superscript]2-[subscript]Al), of isolated aluminum vacancies, (V[subscript]Al)superscript]3-/2- described by V[superscript]2-[subscript]Al)+hv=V[superscript]3-[subscript]Al)+h[superscript]+. In such a context, the reverse process is responsible for the 2.78 eV PL emission. en_US
dc.relation.uri http://doi.org/10.1063/1.3276567 en_US
dc.rights This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s). en_US
dc.rights.uri https://rightsstatements.org/page/InC/1.0/
dc.subject Aluminium compounds en_US
dc.subject III-V semiconductors en_US
dc.subject Impurity absorption spectra en_US
dc.subject Photoluminescence en_US
dc.subject Semiconductor epitaxial layers en_US
dc.subject Vacancies (crystal) en_US
dc.subject Valence bands en_US
dc.subject Wide band gap semiconductors en_US
dc.title The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates en_US
dc.type Text en_US
dc.date.published 2009 en_US
dc.citation.doi 10.1063/1.3276567 en_US
dc.citation.epage 262104-3 en_US
dc.citation.issue 26 en_US
dc.citation.jtitle Applied Physics Letters en_US
dc.citation.spage 262104-1 en_US
dc.citation.volume 95 en_US
dc.contributor.authoreid edgarjh en_US
dc.description.version Article (publisher version)


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This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s). Except where otherwise noted, the use of this item is bound by the following: This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).

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