Cr/Pt Ohmic contacts to B₁₂As₂

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dc.contributor.author Wang, S. H.
dc.contributor.author Lysczek, E. M.
dc.contributor.author Liu, Bangzhi
dc.contributor.author Mohney, S. E.
dc.contributor.author Xu, Z.
dc.contributor.author Nagarajan, R.
dc.contributor.author Edgar, James H.
dc.date.accessioned 2010-03-11T22:53:48Z
dc.date.available 2010-03-11T22:53:48Z
dc.date.issued 2010-03-11T22:53:48Z
dc.identifier.uri http://hdl.handle.net/2097/3161
dc.description.abstract Palladium, Pt, and Cr/Pt contacts to the wide band gap icosahedral boride semiconductor B₁₂As₂ have been studied. All Pd and Pt contacts exhibited nonlinear I-V characteristics, while Cr/Pt contacts were Ohmic. The specific contact resistance was reduced from 6Ω cm² as-deposited to 3x10[superscript]-⁴ Ω cm² after the Cr/Pt contacts were annealed at 750 °C for 30 s in Ar. Annealing at 600 °C or higher drastically reduced the semiconductor sheet resistance, whether annealing was performed before or after metallization. This apparent activation of the semiconductor is a likely cause for the improvement in the Ohmic contacts with annealing. en_US
dc.relation.uri http://link.aip.org/link/?apl/87/042103 en_US
dc.rights Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. en_US
dc.subject Chemical vapor deposition en_US
dc.subject Thin films en_US
dc.subject Growth en_US
dc.title Cr/Pt Ohmic contacts to B₁₂As₂ en_US
dc.type Article (publisher version) en_US
dc.date.published 2005 en_US
dc.citation.doi 10.1063/1.2001760 en_US
dc.citation.epage 042103-3 en_US
dc.citation.issue 4 en_US
dc.citation.jtitle Applied Physics Letters en_US
dc.citation.spage 042103-1 en_US
dc.citation.volume 87 en_US
dc.contributor.authoreid edgarjh en_US


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