Single-crystalline B12As2 on m-plane (11¯00) 15R-SiC

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dc.contributor.author Chen, Hui
dc.contributor.author Wang, Guan
dc.contributor.author Dudley, Michael
dc.contributor.author Xu, Zhou
dc.contributor.author Edgar, James H.
dc.contributor.author Batten, Tim
dc.contributor.author Kuball, Martin
dc.contributor.author Zhang, Lihua
dc.contributor.author Zhu, Yimei
dc.date.accessioned 2009-11-23T22:34:28Z
dc.date.available 2009-11-23T22:34:28Z
dc.date.issued 2008-05-01
dc.identifier.uri http://hdl.handle.net/2097/2186
dc.description.abstract Single crystal, heteroepitaxial growth of icosahedral B12As2 (IBA, a boride semiconductor) on m-plane 15R-SiC is demonstrated. Previous studies of IBA on other substrates, i.e., (111)Si and (0001)6H-SiC, produced polycrystalline and twinned epilayers. In contrast, single-crystalline and untwinned IBA was achieved on m-plane 15R-SiC. Synchrotron white beam x-ray topography, Raman spectroscopy, and high resolution transmission electron microscopy confirm the high quality of the films. High quality growth is shown to be mediated by ordered nucleation of IBA on (474) substrate facets. This work demonstrates that m-plane 15R-SiC is a good substrate choice to grow high-quality untwinned IBA epilayers for future device applications. Financial support from the National Science Foundation Materials World Network Program under Grant No. 0602875 and by the Engineering and Physical Science Research Council (EPSRC) under Grant No. EP/D075033/1 under the NSF-EPSRC Joint Materials Program is acknowledged. The SWBXT was carried out at Stony Brook Topography Facility (Beamline X19C) at the National Synchrotron Light Source (NSLS), Brookhaven National Laboratory (BNL), which is supported by the U.S. Department of Energy (D.O.E.) under Grant No. DE-AC02-76CH00016. Research carried out (in part) at the Center for Functional Nanomaterials, BNL, which is supported by the U.S. Department of Energy, Division of Materials Sciences and Division of Chemical Sciences, under Contract No. DE-AC02-98CH10886. en_US
dc.relation.uri https://doi.org/10.1063/1.2945635 en_US
dc.rights This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s). en_US
dc.rights.uri https://rightsstatements.org/page/InC/1.0/
dc.subject Boron-rich solids en_US
dc.subject Chemical vapor deposition en_US
dc.subject Thin films en_US
dc.subject Heteroepitaxial growth en_US
dc.subject Structural variants en_US
dc.title Single-crystalline B12As2 on m-plane (11¯00) 15R-SiC en_US
dc.type Text en_US
dc.date.published 2008 en_US
dc.citation.doi 10.1063/1.2945635
dc.citation.epage 231917-3 en_US
dc.citation.issue 23 en_US
dc.citation.jtitle Applied Physics Letters en_US
dc.citation.spage 231917-1 en_US
dc.citation.volume 92 en_US
dc.contributor.authoreid edgarjh en_US
dc.description.version Article (publisher version)


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