DEFECT SELECTIVE ETCHING OF THICK AlN LAYERS GROWN ON 6H-SIC SEEDS – A TRANSMISSION ELECTRON MICROSCOPY STUDY

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dc.contributor.author Nyakiti, Luke Owuor
dc.contributor.author Chaudhuri, Jharna
dc.contributor.author Kenik, Ed A.
dc.contributor.author Lu, Peng
dc.contributor.author Edgar, James H.
dc.date.accessioned 2009-11-23T21:40:30Z
dc.date.available 2009-11-23T21:40:30Z
dc.date.issued 2009-11-23T21:40:30Z
dc.identifier.uri http://hdl.handle.net/2097/2183
dc.description.abstract In the present study, the type and densities of defects in AlN crystals grown on 6H-SiC seeds by the sublimation-recombination method were assessed. The positions of the defects in AlN were first identified by defect selective etching (DSE) in molten NaOH-KOH at 400 °C for 2 minutes. Etching produced pits of three different sizes: 1.8, 2.4, and 2.9 μm. The etch pits were either aligned together forming a sub-grain boundary or randomly distributed. The smaller etch pits were either isolated or associated with larger etch pits. After preparing cross-sections of the pits by the focused ion beam (FIB) technique, transmission electron microscopy (TEM) was performed to determine the dislocation type (edge, mixed or screw) associated with a specific etch pit size. Preliminary TEM bright field and dark field imaging using different zone axes and diffraction vectors indicates an edge dislocation with a Burgers vector 1/3[1120] is associated with the smallest etch pit size. en_US
dc.relation.uri https://doi.org/10.1557/PROC-1040-Q11-03 en_US
dc.rights This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s). en_US
dc.rights.uri https://rightsstatements.org/page/InC/1.0/?language=en
dc.title DEFECT SELECTIVE ETCHING OF THICK AlN LAYERS GROWN ON 6H-SIC SEEDS – A TRANSMISSION ELECTRON MICROSCOPY STUDY en_US
dc.type Article (publisher version) en_US
dc.date.published 2008 en_US
dc.citation.jtitle Materials Research Society Symposium Proceedings en_US
dc.citation.volume 1040-Q11-03 en_US
dc.contributor.authoreid edgarjh en_US


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