Browsing Chemical Engineering Faculty Research and Publications by Subject "A3. Hydride vapor phase epitaxy"

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Browsing Chemical Engineering Faculty Research and Publications by Subject "A3. Hydride vapor phase epitaxy"

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  • Padavala, Balabalaji; Frye, C.D.; Wang, Xuejing; Raghothamachar, Balaji; Edgar, James H.
    Improving the crystalline quality of boron phosphide (BP) is essential for realizing its full potential in semiconductor device applications. In this study, 3C-SiC was tested as a substrate for BP epitaxy. BP films were ...
  • Frye, C.D.; Saw, C.K.; Padavala, Balabalaji; Nikolić, R.J.; Edgar, James H.
    Icosahedral boron phosphide (B12P2) is a wide bandgap semiconductor (3.35 eV) that has been reported to “self-heal” from high-energy electron bombardment, making it attractive for potential use in radioisotope batteries, ...

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