Hossain, T.; Wei, Daming; Edgar, James H.; Garces, N. Y.; Nepal, N.; Hite, J. K.; Mastro, M. A.; Eddy C.R, Jr.; Meyer H.M, III
The surface preparation for depositing Al2O3 for fabricating Au/Ni/Al2O3/n-GaN (0001) metal oxide semiconductor (MOS) capacitors was optimized as a step toward realization of high performance GaN MOSFETs. The GaN surface ...