Heteroepitaxial B12As2 on silicon substrates

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dc.contributor.author Xu, Z.
dc.contributor.author Edgar, James H.
dc.contributor.author Speakman, S.
dc.date.accessioned 2013-11-08T20:52:46Z
dc.date.available 2013-11-08T20:52:46Z
dc.date.issued 2013-11-08
dc.identifier.uri http://hdl.handle.net/2097/16763
dc.description.abstract The morphology and crystal structure of rhombohedral B[subscript 12]As[subscript 2] thin films prepared by chemical vapor deposition on Si (100), Si (110) and Si (111) substrates were examined. For short depositions, 30 seconds at 1300 °C, the B[subscript 12]As[subscript 2] nucleated in patterns that were unique to each substrate orientation, probably due to variations in the surface atomic structure and surface activation energy of the substrates. Small square domains, one dimensional straight lines, and irregular lines were the representative morphologies on Si (100), Si (111) and Si (110), respectively. For long deposition, 30 minutes at 1300 °C, continuous thin films of B[subscript 12]As[subscript 2] formed with distinct morphologies also dependent on the orientation of the substrates. “Cross”, “wire” and “chain” morphologies were formed on the Si (100), Si (111) and Si (110) substrates, respectively. X-ray diffraction showed that the B[subscript 12]As[subscript 2] films had the following predominant oriented textures: B[subscript 12]As[subscript 2] (110) on Si(100), B[subscript 12]As[subscript 2] (101) on Si(111), and B[subscript 12]As[subscript 2] (001) on Si(110). The in-plane orientations of the B[subscript 12]As[subscript 2] films as determined by XRD pole figures, is also reported. en_US
dc.language.iso en_US en_US
dc.relation.uri http://www.sciencedirect.com/science/article/pii/S0022024806004490 en_US
dc.subject Nucleation en_US
dc.subject Substrates en_US
dc.subject X-ray diffraction en_US
dc.subject Chemical vapor deposition processes en_US
dc.subject Semiconducting boride compounds en_US
dc.title Heteroepitaxial B12As2 on silicon substrates en_US
dc.type Article (author version) en_US
dc.date.published 2006 en_US
dc.citation.doi doi:10.1016/j.jcrysgro.2006.04.092 en_US
dc.citation.epage 168 en_US
dc.citation.issue 1 en_US
dc.citation.jtitle Journal of Crystal Growth en_US
dc.citation.spage 162 en_US
dc.citation.volume 293 en_US
dc.contributor.authoreid edgarjh en_US


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