One-step synthesis of graphene via catalyst-free gas-phase hydrocarbon detonation

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dc.contributor.author Nepal, Arjun
dc.contributor.author Singh, Gajendra P.
dc.contributor.author Flanders, Bret N.
dc.contributor.author Sorensen, Christopher M.
dc.date.accessioned 2013-07-12T20:29:46Z
dc.date.available 2013-07-12T20:29:46Z
dc.date.issued 2013-07-12
dc.identifier.uri http://hdl.handle.net/2097/15972
dc.description.abstract A one-step, gas-phase, catalyst-free detonation of hydrocarbon (C[subscript 2]H[subscript 2]) method was developed to produce gram quantities of pristine graphene nanosheets (GNs). The detonation of C[subscript 2]H[subscript 2] was carried out in the presence of O[subscript 2]. The molar ratios of O[subscript 2]/C[subscript 2]H[subscript 2] were 0.4, 0.5, 0.6, 0.7, and 0.8. The obtained GNs were analyzed by XRD, TEM, XPS and Raman spectroscopy. The GNs are crystalline with (002) peak centered at 26.05° (d = 0.341 nm). TEM shows that the GNs are stacked in two to three layers and sometimes single layers. An increase in the size of GNs (35-250 nm) along with reduction in defects (Raman I[subscript D]/I[subscript G]~ 1.33- 0.28) and specific surface area (187 to 23 m²gˉ¹) was found with increasing O[subscript 2] content. The high temperature of the detonation, ca. 4000K, is proposed as the cause of graphene production rather than normal soot. The method allows for the control of the number of layers, shape and size of the graphene nanosheets. The process can be scaled up for industrial production. en_US
dc.language.iso en_US en_US
dc.relation.uri http://iopscience.iop.org/0957-4484/24/24/245602 en_US
dc.subject Condensed matter en_US
dc.subject Surfaces en_US
dc.subject Chemical physics en_US
dc.subject Physical chemistry en_US
dc.title One-step synthesis of graphene via catalyst-free gas-phase hydrocarbon detonation en_US
dc.type Article (author version) en_US
dc.date.published 2013 en_US
dc.citation.doi doi:10.1088/0957-4484/24/24/245602 en_US
dc.citation.issue 24 en_US
dc.citation.jtitle Nanotechnology en_US
dc.citation.spage 245602 en_US
dc.citation.volume 24 en_US
dc.contributor.authoreid bflande en_US
dc.contributor.authoreid sor en_US


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