Flux growth and characteristics of cubic boron phosphide

Date

2012-12-05

Journal Title

Journal ISSN

Volume Title

Publisher

Kansas State University

Abstract

Boron phosphide, BP, is a III-V compound semiconductor with a wide band gap of 2.0 eV that is potentially useful in solid state neutron detectors because of the large thermal neutron capture cross-section of the boron-10 isotope (3840 barns). In this study, cubic BP crystals were grown by crystallizing dissolved boron and phosphorus from a nickel solvent in a sealed (previously evacuated) quartz tube. The boron - nickel solution was located at one end of the tube and held at 1150°C. Phosphorus, initially at the opposite end of the tube at a temperature of 430°C, vaporized, filling the tube to a pressure of 1–5 atmospheres. The phosphorus then dissolved into solution, producing BP. Transparent red crystals up to 4 mm in the largest dimension with mostly hexagonal shape were obtained with a cooling rate of 3°C per hour. The crystal size decreased as the cooling rate increased, and also as growth time decreased. The characterization with x-ray diffraction (XRD) and Raman spectroscopy established that the BP produced through this method were highly crystalline. The lattice constant of the crystals was 4.534 Ǻ, as measured by x-ray diffraction. Intense, sharp Raman phonon peaks were located at 800 cm[superscript]-1 and 830 cm[superscript]-1, in agreement with the values reported in the literature. The FWHM for XRD and Raman spectra were 0.275° and 4 cm[superscript]-1 which are the narrowest ever reported and demonstrates the high quality of the produced crystals. Energy dispersive x-ray spectroscopy (EDS) and scanning electron microscope (SEM) also confirmed the synthesized crystals were cubic BP crystals, with a boron to phosphorus atomic ratio of 1:1. Defect selective etching of BP at 300ºC for two minutes with molten KOH/NaOH revealed triangular and striated etch pits with low densities of defects of ~4 x 10[superscript]7 cm[superscript]-2 and 9.2 x 10[superscript]7 cm[superscript]-2 respectively. The BP crystals were n-type, and an electron mobility of ~39.8 cm[superscript]2/V*s was measured. This is favorable for application in neutron detection. Scaling to larger sizes is the next step through gradient freezing and employing a larger crucible.

Description

Keywords

Flux growth, Solution growth, Neutron detector, Defect selective etching, Nickel solvent, Boron phosphide

Graduation Month

May

Degree

Master of Science

Department

Department of Chemical Engineering

Major Professor

J. H. Edgar

Date

2013

Type

Thesis

Citation