Indium, tin, and gallium doped CdSe quantum dots.

K-REx Repository

Show simple item record

dc.contributor.author Tuinenga, Christopher J.
dc.date.accessioned 2011-07-22T18:25:39Z
dc.date.available 2011-07-22T18:25:39Z
dc.date.issued 2011-07-22
dc.identifier.uri http://hdl.handle.net/2097/10745
dc.description.abstract Doping quantum dots to increase conductivity is a crucial step towards being able to fabricate a new generation of electronic devices built on the “bottom-up” platform that are smaller and more efficient than currently available. Indium, tin, and gallium have been used to dope CdSe in both the bulk and thin film regimes and introduce n-type electron donation to the conduction band. CdSe quantum dots have been successfully doped with indium, tin, and gallium using the Li4[Cd10Se4(SPh16)] single source precursor combined with metal chloride compounds. Doping CdSe quantum dots is shown to effect particle growth dynamics in the “heterogeneous growth regime.” Doping with indium, tin, and gallium introduce donor levels 280, 100, and 50 meV below the conduction band minimum, respectively. Thin films of indium and tin doped quantum dots show improved conductivity over films of undoped quantum dots. Transient Absorption spectroscopy indicates that indium doping introduces a new electron energy level in the conduction band that results in a 70 meV blue shift in the 1Se absorption bleach position. Novel characterization methods such as in-situ fluorescence growth monitoring, single quantum dot EDS acquisition, static and time-resolved temperature dependant fluorescence spectroscopy were developed in the course of this work as well. These results show that doping CdSe quantum dots with indium, tin, and gallium has not only been successful but has introduced new electronic properties to the quantum dots that make them superior to traditional CdSe quantum dots. en_US
dc.description.sponsorship American Chemical Society en_US
dc.language.iso en_US en_US
dc.publisher Kansas State University en_US
dc.subject Doping en_US
dc.subject CdSe en_US
dc.subject Quantum dot en_US
dc.title Indium, tin, and gallium doped CdSe quantum dots. en_US
dc.type Dissertation en_US
dc.description.degree Doctor of Philosophy en_US
dc.description.level Doctoral en_US
dc.description.department Department of Chemistry en_US
dc.description.advisor Viktor Chikan en_US
dc.subject.umi Chemistry (0485) en_US
dc.subject.umi Materials Science (0794) en_US
dc.date.published 2011 en_US
dc.date.graduationmonth December en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search K-REx


Advanced Search

Browse

My Account

Statistics








Center for the

Advancement of Digital

Scholarship

cads@k-state.edu