Raman measurements of dye-laser-annealed, ion implanted GaAs
| dc.contributor.author | Yao, Huade. | en_US |
| dc.date.accessioned | 2015-12-30T23:10:32Z | |
| dc.date.available | 2015-12-30T23:10:32Z | |
| dc.date.issued | 1986 | en_US |
| dc.date.published | 1986 | en_US |
| dc.description | Call number: LD2668 .T4 1986 Y36 | en_US |
| dc.description.degree | Master of Science | en_US |
| dc.description.department | Physics | en_US |
| dc.description.level | Masters | en_US |
| dc.identifier.uri | http://hdl.handle.net/2097/22183 | |
| dc.subject.AAT | Masters theses | en_US |
| dc.subject.LCSH | Raman spectroscopy. | en_US |
| dc.subject.LCSH | Annealing of crystals. | en_US |
| dc.subject.LCSH | Gallium arsenide semiconductors. | en_US |
| dc.subject.LCSH | Dye lasers. | en_US |
| dc.subject.LCSH | Ion implantation. | en_US |
| dc.title | Raman measurements of dye-laser-annealed, ion implanted GaAs | en_US |
| dc.type | Text | en_US |
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