Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device


Show simple item record Gong, Y. Tapajna, M. Bakalova, S. Zhang, Y. Edgar, James H. Zhang, Y. Dudley, M. Hopkins, M. Kuball, M. 2010-07-29T19:16:57Z 2010-07-29T19:16:57Z 2010-07-29T19:16:57Z
dc.description.abstract B[subscript]12As[subscript]2/SiC pn heterojunction diodes based on the radiation-hard B[subscript]12As[subscript]2 deposited on (0001) n-type 4H–SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4 x 10[superscript]-6 A/cm[superscript]2. Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of ~1.8–2.0 10[superscript]17 cm[superscript]−3 in B[subscript]12As[subscript]2 with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B[subscript]12As[subscript]2 and SiC were estimated to be ~1.06 eV and 1.12 eV for conduction band and valance band, respectively. en_US
dc.relation.uri en_US
dc.rights Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. en_US
dc.subject Rich Solids en_US
dc.subject Capacitance en_US
dc.subject Irradiation en_US
dc.subject Growth en_US
dc.title Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device en_US
dc.type Article (publisher version) en_US 2010 en_US
dc.citation.doi doi:10.1063/1.3443712 en_US
dc.citation.epage 3 en_US
dc.citation.issue 223506 en_US
dc.citation.jtitle Applied Physics Letters en_US
dc.citation.spage 1 en_US
dc.citation.volume 96 en_US
dc.contributor.authoreid edgarjh en_US

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