Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

K-REx Repository

Show simple item record

dc.contributor.author Gong, Y.
dc.contributor.author Tapajna, M.
dc.contributor.author Bakalova, S.
dc.contributor.author Zhang, Y.
dc.contributor.author Edgar, James H.
dc.contributor.author Zhang, Y.
dc.contributor.author Dudley, M.
dc.contributor.author Hopkins, M.
dc.contributor.author Kuball, M.
dc.date.accessioned 2010-07-29T19:16:57Z
dc.date.available 2010-07-29T19:16:57Z
dc.date.issued 2010-07-29T19:16:57Z
dc.identifier.uri http://hdl.handle.net/2097/4323
dc.description.abstract B[subscript]12As[subscript]2/SiC pn heterojunction diodes based on the radiation-hard B[subscript]12As[subscript]2 deposited on (0001) n-type 4H–SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4 x 10[superscript]-6 A/cm[superscript]2. Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of ~1.8–2.0 10[superscript]17 cm[superscript]−3 in B[subscript]12As[subscript]2 with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B[subscript]12As[subscript]2 and SiC were estimated to be ~1.06 eV and 1.12 eV for conduction band and valance band, respectively. en_US
dc.relation.uri http://link.aip.org/link/?apl/96/223506 en_US
dc.rights Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. en_US
dc.subject Rich Solids en_US
dc.subject Capacitance en_US
dc.subject Irradiation en_US
dc.subject Growth en_US
dc.title Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device en_US
dc.type Article (publisher version) en_US
dc.date.published 2010 en_US
dc.citation.doi doi:10.1063/1.3443712 en_US
dc.citation.epage 3 en_US
dc.citation.issue 223506 en_US
dc.citation.jtitle Applied Physics Letters en_US
dc.citation.spage 1 en_US
dc.citation.volume 96 en_US
dc.contributor.authoreid edgarjh en_US

Files in this item


Files Size Format View

This item appears in the following Collection(s)

Show simple item record