Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

Abstract

B[subscript]12As[subscript]2/SiC pn heterojunction diodes based on the radiation-hard B[subscript]12As[subscript]2 deposited on (0001) n-type 4H–SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4 x 10[superscript]-6 A/cm[superscript]2. Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of ~1.8–2.0 10[superscript]17 cm[superscript]−3 in B[subscript]12As[subscript]2 with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B[subscript]12As[subscript]2 and SiC were estimated to be ~1.06 eV and 1.12 eV for conduction band and valance band, respectively.