Characterization of the electrical and physical properties of scandium nitride grown using hydride vapor phase epitaxy

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dc.contributor.author Richards, Paul
dc.date.accessioned 2010-05-10T13:21:47Z
dc.date.available 2010-05-10T13:21:47Z
dc.date.issued 2010-05-10T13:21:47Z
dc.identifier.uri http://hdl.handle.net/2097/4090
dc.description.abstract It is important in semiconductor manufacturing to understand the physical and electrical characteristics of new proposed semiconductors to determine their usefulness. Many tests are used in order to achieve this goal, such as x-ray diffraction, Hall effect measurements, and the scanning electron microscope. With these tests, the usefulness of the semiconductor can be determined, leading to more possibilities for growth in industry. The purpose of the present study was to look at the semiconductor scandium nitride (ScN), grown using the hydride vapor phase epitaxy (HVPE) method on various substrates, and determine the physical and electrical properties of the sample. This study also sought to answer the following questions: 1) Can any trends be found from the results?, and 2) What possible application could scandium nitride be used for in the future? A sample set of scandium nitride samples was selected. Each one of these samples was checked for contaminants from the growth procedure, such as chlorine, under the scanning electron microscope and checked for good conduction of current needed for the Hall effect measurements. The thickness of the scandium nitride layer was computed using the scanning electron microscope. Using the thickness of the scandium nitride, Hall effect measurement values were computed. The plane the samples lie on was checked using x-ray diffraction. The test results shed light on many trends in the scandium nitride. Many of the samples were determined to have an aluminum nitride (AlN) contamination. This contamination led to a much higher resistivity and a much lower mobility no matter what thickness the scandium nitride was. The data from the samples was then used to offer suggestions on how to improve the growth process. en_US
dc.language.iso en_US en_US
dc.publisher Kansas State University en
dc.subject Scandium en_US
dc.subject Nitride en_US
dc.subject HVPE en_US
dc.subject Epitaxy en_US
dc.subject characterization en_US
dc.subject ScN en_US
dc.title Characterization of the electrical and physical properties of scandium nitride grown using hydride vapor phase epitaxy en_US
dc.type Report en_US
dc.description.degree Master of Science en_US
dc.description.level Masters en_US
dc.description.department Department of Electrical and Computer Engineering en_US
dc.description.advisor Andrew Rys en_US
dc.subject.umi Engineering, Chemical (0542) en_US
dc.subject.umi Engineering, Electronics and Electrical (0544) en_US
dc.date.published 2010 en_US
dc.date.graduationmonth May en_US


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