Grinding of silicon wafers: a review from historical perspectives

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dc.contributor.author Pei, Zhijian J.
dc.contributor.author Fisher, Graham R.
dc.contributor.author Liu, J.
dc.date.accessioned 2009-11-25T22:12:50Z
dc.date.available 2009-11-25T22:12:50Z
dc.date.issued 2009-11-25T22:12:50Z
dc.identifier.uri http://hdl.handle.net/2097/2191
dc.description.abstract The majority of semiconductor devices are built on silicon wafers. Manufacturing of high quality silicon wafers involves several machining processes including grinding. This review paper discusses historical perspectives on grinding of silicon wafers, impacts of wafer size progression on applications of grinding in silicon wafer manufacturing, and interrelationships between grinding and two other silicon machining processes (slicing and polishing). It is intended to help readers to gain a more comprehensive view on grinding of silicon wafers, and to be instrumental for research and development in grinding of wafers made from other materials (such as gallium arsenide, germanium, lithium niobate, sapphire, and silicon carbide). en_US
dc.relation.uri http://www.elsevier.com/wps/find/journaldescription.cws_home/264/description#description en_US
dc.subject Abrasive en_US
dc.subject Gallium arsenide en_US
dc.subject Germanium en_US
dc.subject Grinding en_US
dc.subject Lapping en_US
dc.subject Lithium niobate en_US
dc.subject Machining en_US
dc.subject Polishing en_US
dc.subject Sapphire en_US
dc.subject Semiconductor material en_US
dc.subject Silicon en_US
dc.subject Silicon carbide en_US
dc.subject Silicon wafer en_US
dc.title Grinding of silicon wafers: a review from historical perspectives en_US
dc.type Article (author version) en_US
dc.date.published 2008 en_US
dc.citation.epage 1307 en_US
dc.citation.issue 12-13 en_US
dc.citation.jtitle International Journal of Machine Tools and Manufacture en_US
dc.citation.spage 1297 en_US
dc.citation.volume 48 en_US
dc.contributor.authoreid zpei en_US

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