Defect structures in B[subscript]12As[subscript]2 epitaxial layers grown on (0001) 6H-SiC

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dc.contributor.author Chen, H.
dc.contributor.author Wang, G.
dc.contributor.author Dudley, M.
dc.contributor.author Zhang, L.
dc.contributor.author Wu, L.
dc.contributor.author Zhu, Y.
dc.contributor.author Xu, Z.
dc.contributor.author Edgar, James H.
dc.contributor.author Kuball, M.
dc.date.accessioned 2009-11-23T22:34:44Z
dc.date.available 2009-11-23T22:34:44Z
dc.date.issued 2009-11-23T22:34:44Z
dc.identifier.uri http://hdl.handle.net/2097/2187
dc.description.abstract A detailed analysis of the microstructure in B12[subscript]As[subscript]2 epitaxial layers grown by chemical-vapor deposition on (0001) 6H-SiC substrates is presented. Synchrotron white beam x-ray topography enabled macroscopic characterization of the substrate/epilayer ensembles and revealed the presence of a quite homogeneous solid solution of twin and matrix epilayer domains forming a submicron mosaic structure. The basic epitaxial relationship was found to be (0001)(B12[subscript]As[subscript]2) < 1120 >(B12[subscript]As[subscript]2) parallel to(0001)(6H-SiC) < 1120 >(6H-SiC) and the twin relationship comprised a 180 degrees (or equivalently 60 degrees) rotation about [0001](B12[subscript]As[subscript]2) in agreement with previous reports. Cross-sectional high resolution transmission electron microscopy revealed the presence of a similar to 200 nm thick disordered transition layer which was shown to be created by the coalescence of a mosaic of translationally and rotationally variant domains nucleated at various types of nucleation sites available on the (0001) 6H-SiC surface. In this transition layer, competition between the growth of the various domains is mediated in part by the energy of the boundaries created between them as they coalesce. Boundaries between translationally variant domains are shown to have unfavorable bonding configurations and hence high-energy. These high-energy boundaries can be eliminated during mutual overgrowth by the generation of a 1/3[0001](B12[subscript]As[subscript]2) Frank partial dislocation which effectively eliminates the translational variants. This leads to an overall improvement in film quality beyond thicknesses of similar to 200 nm as the translational variants grow out leaving only the twin variants. (0003) twin boundaries in the regions beyond 200 nm are shown to possess fault vectors such as 1/6[1100](B12[subscript]As[subscript]2), which are shown to originate from the mutual shift between the nucleation sites of the respective domains. en_US
dc.relation.uri http://link.aip.org/link/?jap/103/123508 en_US
dc.rights Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. en_US
dc.subject Boron-rich solids en_US
dc.subject Cemical vapor deposition en_US
dc.subject Thin films en_US
dc.subject Heteroepitaxial growth en_US
dc.subject Variants en_US
dc.title Defect structures in B[subscript]12As[subscript]2 epitaxial layers grown on (0001) 6H-SiC en_US
dc.type Article (publisher version) en_US
dc.date.published 2008 en_US
dc.citation.epage 123508-9 en_US
dc.citation.issue 12 en_US
dc.citation.jtitle Journal of Applied Physics en_US
dc.citation.spage 123508-1 en_US
dc.citation.volume 103 en_US
dc.contributor.authoreid edgarjh en_US

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