Browsing Chemical Engineering Faculty Research and Publications by Subject "Chemical vapor deposition"

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Browsing Chemical Engineering Faculty Research and Publications by Subject "Chemical vapor deposition"

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  • Wang, S. H.; Lysczek, E. M.; Liu, Bangzhi; Mohney, S. E.; Xu, Z.; Nagarajan, R.; Edgar, James H. (2005)
    Palladium, Pt, and Cr/Pt contacts to the wide band gap icosahedral boride semiconductor B₁₂As₂ have been studied. All Pd and Pt contacts exhibited nonlinear I-V characteristics, while Cr/Pt contacts were Ohmic. The specific ...
  • Zhang, Yu; Chen, Hui; Dudley, Michael; Zhang, Yi; Edgar, James H.; Gong, Yinyan; Bakalova, Silvia; Kuball, Martin; Zhang, Lihua; Su, Dong; Kisslinger, Kim; Zhu, Yimei (Materials Research Society, 2010)
    Epitaxial growth of icosahedral boron arsenide (B[subscript]12As[subscript]2, abbreviated here as IBA) on 4HSiC substrates intentionally misoriented from (0001) towards [1-100] is shown to eliminate rotational twinning. ...
  • Chen, Hui; Wang, Guan; Dudley, Michael; Xu, Zhou; Edgar, James H.; Batten, Tim; Kuball, Martin; Zhang, Lihua; Zhu, Yimei (2008)
    Single crystal, heteroepitaxial growth of icosahedral B[subscript]12As[subscript]2 (IBA, a boride semiconductor) on m-plane 15R-SiC is demonstrated. Previous studies of IBA on other substrates, i.e., 111 Si and 0001 ...