Browsing College of Engineering by Author "Edgar, James H."

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Browsing College of Engineering by Author "Edgar, James H."

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  • Edgar, James H.; Hoffman, T.B.; Clubine, B.; Currie, M.; Du, X.Z.; Lin, J.Y.; Jiang, H.X. (2014-11-25)
    The optical and physical properties of hexagonal boron nitride single crystals grown from a molten metal solution are reported. The hBN crystals were grown by precipitation from a nickel-chromium flux with a boron nitride ...
  • Whiteley, C. E.; Kirkham, M. J.; Edgar, James H. (2013-04-10)
    The present investigation was undertaken to determine the coefficients of thermal expansion for the boron-rich compound semiconductor icosahedral boron arsenide (B[subscript 12]As[subscript 2]). B[subscript 12]As[subscript ...
  • Wei, Daming; Hossain, T.; Nepal, N.; Garces, N. Y.; Hite, J. K.; Meyer, H. M. III; Eddy, C. R. Jr.; Edgar, James H. (2014-07-22)
    This study compares the physical, chemical and electrical properties of Al[subscript 2]O[subscript 3] thin films deposited on gallium polar c- and nonpolar m -plane GaN substrates by atomic layer deposition (ALD). Correlations ...
  • Wang, S. H.; Lysczek, E. M.; Liu, Bangzhi; Mohney, S. E.; Xu, Z.; Nagarajan, R.; Edgar, James H. (2010-03-11)
    Palladium, Pt, and Cr/Pt contacts to the wide band gap icosahedral boride semiconductor B₁₂As₂ have been studied. All Pd and Pt contacts exhibited nonlinear I-V characteristics, while Cr/Pt contacts were Ohmic. The specific ...
  • Padavala, Balabalaji; Frye, C.D.; Wang, Xuejing; Raghothamachar, Balaji; Edgar, James H.
    Improving the crystalline quality of boron phosphide (BP) is essential for realizing its full potential in semiconductor device applications. In this study, 3C-SiC was tested as a substrate for BP epitaxy. BP films were ...
  • Nyakiti, Luke Owuor; Chaudhuri, Jharna; Kenik, Ed A.; Lu, Peng; Edgar, James H. (2009-11-23)
    In the present study, the type and densities of defects in AlN crystals grown on 6H-SiC seeds by the sublimation-recombination method were assessed. The positions of the defects in AlN were first identified by defect ...
  • Chen, H.; Wang, G.; Dudley, M.; Zhang, L.; Wu, L.; Zhu, Y.; Xu, Z.; Edgar, James H.; Kuball, M. (2009-11-23)
    A detailed analysis of the microstructure in B12[subscript]As[subscript]2 epitaxial layers grown by chemical-vapor deposition on (0001) 6H-SiC substrates is presented. Synchrotron white beam x-ray topography enabled ...
  • Gong, Y.; Tapajna, M.; Bakalova, S.; Zhang, Y.; Edgar, James H.; Zhang, Y.; Dudley, M.; Hopkins, M.; Kuball, M. (2010-07-29)
    B[subscript]12As[subscript]2/SiC pn heterojunction diodes based on the radiation-hard B[subscript]12As[subscript]2 deposited on (0001) n-type 4H–SiC via chemical vapor deposition were demonstrated. The diodes exhibit ...
  • Hossain, T.; Wei, D.; Edgar, James H.; Garces, N. Y.; Nepal, N.; Hite, J. K.; Mastro, M. A.; Eddy C.R, Jr.; Meyer H.M, III
    The surface preparation for depositing Al2O3 for fabricating Au/Ni/Al2O3/n-GaN (0001) metal oxide semiconductor (MOS) capacitors was optimized as a step toward realization of high performance GaN MOSFETs. The GaN surface ...
  • Zhang, Yu; Chen, Hui; Dudley, Michael; Zhang, Yi; Edgar, James H.; Gong, Yinyan; Bakalova, Silvia; Kuball, Martin; Zhang, Lihua; Su, Dong; Zhu, Yimei (2012-10-04)
    Epitaxial growth of icosahedral B[subscript 12]As[subscript 2] on c-plane 4H-SiC substrates has been analyzed. On on-axis c-plane 4H-SiC substrates, Synchrotron white beam x-ray topography (SWBXT) revealed the presence of ...
  • Xu, Z.; Edgar, James H.; Speakman, S. (2013-11-08)
    The morphology and crystal structure of rhombohedral B[subscript 12]As[subscript 2] thin films prepared by chemical vapor deposition on Si (100), Si (110) and Si (111) substrates were examined. For short depositions, 30 ...
  • Edgar, James H.; Bohnen, T.; Hageman, P. R. (2010-06-10)
    The epitaxy of scandium nitride deposited by hydride vapor phase epitaxy on 6HSiC( 0001) substrates is reported. The structure and composition of the deposited films were dependent on both the scandium metal source and ...
  • Frye, C.D.; Saw, C.K.; Padavala, Balabalaji; Nikolić, R.J.; Edgar, James H.
    Icosahedral boron phosphide (B12P2) is a wide bandgap semiconductor (3.35 eV) that has been reported to “self-heal” from high-energy electron bombardment, making it attractive for potential use in radioisotope batteries, ...
  • Wei, D.; Hossain, T.; Garces, N. Y.; Nepal, N.; Meyer, H. M., III; Kirkham, M. J.; Eddy, C. R. Jr.; Edgar, James H. (2013-08-28)
    This paper reports on the influence of deposition temperature on the structure, composition, and electrical properties of TiO[subscript 2] thin films deposited on n-type silicon (100) by plasma-assisted atomic layer ...
  • Zhang, Yu; Chen, Hui; Dudley, Michael; Zhang, Yi; Edgar, James H.; Gong, Yinyan; Bakalova, Silvia; Kuball, Martin; Zhang, Lihua; Su, Dong; Kisslinger, Kim; Zhu, Yimei (Materials Research Society, 2010-07-29)
    Epitaxial growth of icosahedral boron arsenide (B[subscript]12As[subscript]2, abbreviated here as IBA) on 4HSiC substrates intentionally misoriented from (0001) towards [1-100] is shown to eliminate rotational twinning. ...
  • Edgar, James H.; Du, L.; Lee, R. G.; Nyakiti, L.; Chaudhuri, J. (2009-11-17)
    Oxygen degrades the properties of AlN, thus producing bulk single crystals with low oxygen concentrations is an important goal. Most of the oxygen in bulk AlN single crystals grown by the sublimation-recondensation method ...
  • Li, J.; Cao, X. K.; Hoffman, T. B.; Edgar, James H.; Lin, J. Y.; Jiang, H. X.
    In contrast to other III-nitride semiconductors GaN and AlN, the intrinsic (or free) exciton transition in hexagonal boron nitride (h-BN) consists of rather complex fine spectral features (resolved into six sharp emission ...
  • Hoffman, Timothy B.; Clubine, B.; Zhang, Y.; Snow, K.; Edgar, James H. (2014-06-20)
    Hexagonal boron nitride (hBN) single crystals were grown using a Ni–Cr flux growth method. The crystallization cooling rate, soak temperature and soak time were controlled to determine their effect on crystal size and ...
  • Sedhain, A.; Du, L.; Edgar, James H.; Lin, J. Y.; Jiang, H. X. (2010-03-11)
    The yellow color of bulk AlN crystals was found to be caused by the optical absorption of light with wavelengths shorter than that of yellow. This yellow impurity limits UV transparency and hence restricts the applications ...
  • Zhang, Yu; Chen, Hui; Zhang, Ning; Dudley, Michael; Gong, Yinyan; Kuball, Martin; Xu, Zhou; Zhang, Yi; Edgar, James H.; Zhang, Lihua; Zhu, Yimei (2009-11-23)
    The defect structure in B[subscript]12As[subscript]2 epitaxial layers grown at two different temperatures on (0001) 6H-SiC by chemical vapor deposition (CVD) was studied using synchrotron white beam x-ray topography ...

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