Browsing by Author "Nwagwu, Ugochukwu"

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Browsing by Author "Nwagwu, Ugochukwu"

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  • Nwagwu, Ugochukwu (Kansas State University, 2012-12-05)
    Boron phosphide, BP, is a III-V compound semiconductor with a wide band gap of 2.0 eV that is potentially useful in solid state neutron detectors because of the large thermal neutron capture cross-section of the boron-10 ...
  • Nwagwu, Ugochukwu; Edgar, James H.; Gong, Yinyan; Kuball, Martin (2013-01-29)
    The ability to intercept attempts to smuggle nuclear weapons into the United States is critically important for homeland security. New types of neutron detectors are especially needed, as current devices employ a rare ...
  • Klein, P. B.; Nwagwu, Ugochukwu; Edgar, James H.; Freitas, J. A., Jr. (2012-09-07)
    The indirect band gap of icosahedral B[subscript]12As[subscript]2 (IBA) has been determined by variable temperature photoluminescence measurements (8 K-294 K) on solution-grown bulk samples. In addition, evidence of three ...

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